CSD25404Q3

new-10%

Manufacturer part number:CSD25404Q3

Manufacturer:Texas Instruments

Description:CSD25404Q3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD25404Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Base Part Number	CSD25404
Number of Elements	1
Power Dissipation-Max	2.8W Ta 96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	SOURCE
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.15V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2120pF @ 10V
Current - Continuous Drain (Id) @ 25°C	104A Tc
Gate Charge (Qg) (Max) @ Vgs	14.1nC @ 4.5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	104A
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.0121Ohm
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	20V
Length	3.3mm
Width	3.3mm
Thickness	1mm
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead