IXFK230N20T

new-10%

Manufacturer part number:IXFK230N20T

Manufacturer:IXYS

Description:MOSFET N-CH 200V 230A TO-264

Case Package:SOT-23

Datasheet:IXFK230N20T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Packaging	Tube
Published	2011
Series	GigaMOS™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1670W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.67kW
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	7.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	230A Tc
Gate Charge (Qg) (Max) @ Vgs	378nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	230A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0075Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	630A
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free