IXFK24N100

new-10%

Manufacturer part number:IXFK24N100

Manufacturer:IXYS

Description:MOSFET N-CH 1KV 24A TO-264AA

Case Package:SOT-23

Datasheet:IXFK24N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Resistance	390MOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Current Rating	24A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	560W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	560W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	267nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	96A
Height	26.16mm
Length	19.96mm
Width	5.13mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free