SPU09P06PL

new-10%

Manufacturer part number:SPU09P06PL

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 60V 9.7A TO-251

Case Package:SOT-23

Datasheet:SPU09P06PL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-9.7A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	42W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.7A Tc
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Rise Time	168ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	89 ns
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	9.7A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	38.8A
Avalanche Energy Rating (Eas)	70 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead