IXFK38N80Q2

new-10%

Manufacturer part number:IXFK38N80Q2

Manufacturer:IXYS

Description:MOSFET N-CH 800V 38A TO-264

Case Package:SOT-23

Datasheet:IXFK38N80Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	735W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	735W
Case Connection	DRAIN
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8340pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	190nC @ 10V
Rise Time	16ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	38A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.22Ohm
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	4000 mJ
Height	26.16mm
Length	19.96mm
Width	5.13mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free