IXFL70N60Q2

new-10%

Manufacturer part number:IXFL70N60Q2

Manufacturer:IXYS

Description:IXYS IXFL70N60Q2 N-channel MOSFET Transistor, 37 A, 600 V, 3-Pin ISOPLUS264

Case Package:SOT-23

Datasheet:IXFL70N60Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Number of Pins	264
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	360W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360W
Case Connection	ISOLATED
Turn On Delay Time	26 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	92m Ω @ 35A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	37A Tc
Gate Charge (Qg) (Max) @ Vgs	265nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	37A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.092Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	280A
Avalanche Energy Rating (Eas)	5000 mJ
Height	26.42mm
Length	20.29mm
Width	5.21mm
RoHS Status	ROHS3 Compliant