IXFN180N10

new-10%

IXFN180N10

Manufacturer part number:IXFN180N10

Manufacturer:IXYS

Description:MOSFET N-CH 100V 180A SOT-227B

Case Package:SOT-23

Datasheet:IXFN180N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	42g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	8MOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	180A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	65 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	180A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	720A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	3000 mJ
Recovery Time	250 ns
Isolation Voltage	2.5kV
Nominal Vgs	4 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free