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PHP101NQ04T,127

PHP101NQ04T,127

PHP101NQ04T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 8m Ω @ 25A, 10V ±20V 2020pF @ 25V 36.6nC @ 10V 40V TO-220-3

SOT-23

PHP101NQ04T,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Series TrenchMOS™
Published 2009
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 157W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2020pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 36.6nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 240A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 200 mJ
RoHS StatusROHS3 Compliant
In-Stock:4581 items

PHP101NQ04T,127 Product Details

PHP101NQ04T,127 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 2020pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 40V.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

PHP101NQ04T,127 Features


the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 240A.
a 40V drain to source voltage (Vdss)


PHP101NQ04T,127 Applications


There are a lot of NXP USA Inc.
PHP101NQ04T,127 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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