IPB052N04NGATMA1

new-10%

Manufacturer part number:IPB052N04NGATMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

Case Package:SOT-23

Datasheet:IPB052N04NGATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	79W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	79W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 70A, 10V
Vgs(th) (Max) @ Id	4V @ 33μA
Input Capacitance (Ciss) (Max) @ Vds	3300pF @ 20V
Current - Continuous Drain (Id) @ 25°C	70A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	70A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0052Ohm
Pulsed Drain Current-Max (IDM)	400A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	35 mJ
RoHS Status	RoHS Compliant