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IXFN180N15P

IXFN180N15P

IXFN180N15P

IXYS

MOSFET (Metal Oxide) N-Channel Box 11m Ω @ 90A, 10V ±20V 7000pF @ 25V 240nC @ 10V SOT-227-4, miniBLOC

SOT-23

IXFN180N15P Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Chassis Mount, Panel
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Box
Series PolarHT™
Published 2003
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 11MOhm
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 680W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 680W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 150A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 380A
Height 9.6mm
Length 38.23mm
Width 25.42mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $21.32000 $21.32
10 $19.38000 $193.8
25 $17.92640 $448.16
100 $16.47300 $1647.3
250 $15.01952 $3754.88
500 $14.05050 $7025.25
IXFN180N15P Product Details

IXFN180N15P Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 150V.As a result of its turn-off delay time, which is 150 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 380A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFN180N15P Features


a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 380A.
a threshold voltage of 5V


IXFN180N15P Applications


There are a lot of IXYS
IXFN180N15P applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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