IXFN280N07

new-10%

Manufacturer part number:IXFN280N07

Manufacturer:IXYS

Description:MOSFET N-CH 70V 280A SOT-227B

Case Package:SOT-23

Datasheet:IXFN280N07 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 120A, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	280A Tc
Gate Charge (Qg) (Max) @ Vgs	420nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	280A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.005Ohm
Drain to Source Breakdown Voltage	70V
Pulsed Drain Current-Max (IDM)	1120A
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant