FQE10N20CTU

new-10%

Manufacturer part number:FQE10N20CTU

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 200V 4A TO-126

Case Package:SOT-23

Datasheet:FQE10N20CTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	TO-126-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	12.8W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V