SIA456DJ-T1-GE3

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SIA456DJ-T1-GE3

Manufacturer part number:SIA456DJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:SIA456DJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

Case Package:SOT-23

Datasheet:SIA456DJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	1.38Ohm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-C3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.5W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.38 Ω @ 750mA, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 100V
Current - Continuous Drain (Id) @ 25°C	2.6A Tc
Gate Charge (Qg) (Max) @ Vgs	14.5nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±16V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	2.6A
Threshold Voltage	1.4V
Gate to Source Voltage (Vgs)	16V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	2A
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.4 V
Height	800μm
Length	2.05mm
Width	2.05mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free