IXFN32N60

new-10%

Manufacturer part number:IXFN32N60

Manufacturer:IXYS

Description:MOSFET N-CH 600V 32A SOT-227

Case Package:SOT-23

Datasheet:IXFN32N60 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1996
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	520AW Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	520W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	325nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	60 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	128A
RoHS Status	ROHS3 Compliant