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RCD040N25TL

RCD040N25TL

RCD040N25TL

ROHM Semiconductor

MOSFET N-CH 250V 4A SOT-428

SOT-23

RCD040N25TL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 20W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Current - Continuous Drain (Id) @ 25°C 4A Ta
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 1Ohm
Drain to Source Breakdown Voltage 250V
Pulsed Drain Current-Max (IDM) 16A
Avalanche Energy Rating (Eas) 1.61 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.285538 $3.285538
10 $3.099564 $30.99564
100 $2.924117 $292.4117
500 $2.758601 $1379.3005
1000 $2.602454 $2602.454

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