IXFX88N20Q

new-10%

Manufacturer part number:IXFX88N20Q

Manufacturer:IXYS

Description:MOSFET N-CH 200V 88A PLUS247

Case Package:SOT-23

Datasheet:IXFX88N20Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	30m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	88A Tc
Gate Charge (Qg) (Max) @ Vgs	146nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	61 ns
Continuous Drain Current (ID)	88A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant