IXFN34N80

new-10%

Manufacturer part number:IXFN34N80

Manufacturer:IXYS

Description:MOSFET N-CH 800V 34A SOT-227B

Case Package:SOT-23

Datasheet:IXFN34N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	240m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Rise Time	45ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	136A
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant