IPA65R095C7XKSA1

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Manufacturer part number:IPA65R095C7XKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V TO220-3

Case Package:SOT-23

Datasheet:IPA65R095C7XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™ C7
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	34W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	95m Ω @ 11.8A, 10V
Vgs(th) (Max) @ Id	4V @ 590μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2140pF @ 400V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Drain-source On Resistance-Max	0.095Ohm
Pulsed Drain Current-Max (IDM)	100A
Avalanche Energy Rating (Eas)	118 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free