SIHB8N50D-GE3

new-10%

Manufacturer part number:SIHB8N50D-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 500V [email protected] 8.7A N-Ch D-SRS

Case Package:SOT-23

Datasheet:SIHB8N50D-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	156W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	527pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8.7A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	11 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	8.7A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.85Ohm
Pulsed Drain Current-Max (IDM)	18A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	29 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant