IXFP12N50P

new-10%

Manufacturer part number:IXFP12N50P

Manufacturer:IXYS

Description:MOSFET HiPERFET Id12 BVdass500

Case Package:SOT-23

Datasheet:IXFP12N50P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarP2™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Current Rating	12A
Pin Count	3
Number of Elements	1
Power Dissipation-Max	200W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	200W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1830pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	29nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	12A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	500V
Avalanche Energy Rating (Eas)	600 mJ
Height	9.15mm
Length	10.66mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free