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IXTH1N170DHV

  • IXTH1N170DHV
  • IXTH1N170DHV

IXTH1N170DHV

IXTH1N170DHV

IXYS

MOSFET N-CH

SOT-23

IXTH1N170DHV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-247-3 Variant
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 290W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16 Ω @ 500mA, 0V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Tj
Gate Charge (Qg) (Max) @ Vgs 47nC @ 5V
Drain to Source Voltage (Vdss) 1700V
Drive Voltage (Max Rds On,Min Rds On) 0V
Vgs (Max) ±20V
FET Feature Depletion Mode
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $13.933780 $13.93378
10 $13.145075 $131.45075
100 $12.401014 $1240.1014
500 $11.699070 $5849.535
1000 $11.036859 $11036.859

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