IXFP22N65X2

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Manufacturer part number:IXFP22N65X2

Manufacturer:IXYS

Description:N-Channel Tube 160m Ω @ 11A, 10V ±30V 2310pF @ 25V 38nC @ 10V 650V TO-220-3

Case Package:SOT-23

Datasheet:IXFP22N65X2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	390W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	160m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	5.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	2310pF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	22A
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$4.585000	$4.585
10	$4.325472	$43.25472
100	$4.080634	$408.0634
500	$3.849654	$1924.827
1000	$3.631749	$3631.749

IXFP22N65X2 Overview

The maximum input capacitance of this device is 2310pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.