IXFQ140N20X3

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Manufacturer part number:IXFQ140N20X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 9.6m Ω @ 70A, 10V ±20V 7660pF @ 25V 127nC @ 10V 200V TO-3P-3, SC-65-3

Case Package:SOT-23

Datasheet:IXFQ140N20X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	520W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	9.6m Ω @ 70A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	7660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	140A Tc
Gate Charge (Qg) (Max) @ Vgs	127nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$10.289000	$10.289
10	$9.706604	$97.06604
100	$9.157173	$915.7173
500	$8.638843	$4319.4215
1000	$8.149852	$8149.852

IXFQ140N20X3 Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7660pF @ 25V maximal input capacitance.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).