IXFQ94N30P3

new-10%

Manufacturer part number:IXFQ94N30P3

Manufacturer:IXYS

Description:MOSFET N-Channel: Power MOSFET w/Fast Diode

Case Package:SOT-23

Datasheet:IXFQ94N30P3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, Polar3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1040W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	36m Ω @ 47A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	94A Tc
Gate Charge (Qg) (Max) @ Vgs	102nC @ 10V
Drain to Source Voltage (Vdss)	300V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	49 ns
Continuous Drain Current (ID)	94A
Gate to Source Voltage (Vgs)	20V
Avalanche Energy Rating (Eas)	2500 mJ
Height	20.3mm
Length	15.8mm
Width	4.9mm
RoHS Status	ROHS3 Compliant