NTD18N06-001

new-10%

Manufacturer part number:NTD18N06-001

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 18A IPAK

Case Package:SOT-23

Datasheet:NTD18N06-001 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Current Rating	18A
Power Dissipation-Max	2.1W Ta 55W Tj
Element Configuration	Single
Power Dissipation	55W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	710pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Ta
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Rise Time	23ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	19 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead