IXFR90N30

new-10%

Manufacturer part number:IXFR90N30

Manufacturer:IXYS

Description:MOSFET N-CH 300V 75A ISOPLUS247

Case Package:SOT-23

Datasheet:IXFR90N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	417W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	33m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	55ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	75A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	300V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free