IRF7433 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF7433 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2007
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
24mOhm @ 8.7A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1877pF @ 10V
Current - Continuous Drain (Id) @ 25°C
8.9A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 4.5V
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
RoHS Status
Non-RoHS Compliant
IRF7433 Product Details
IRF7433 Description
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.