SI3407DV-T1-E3

new-10%

Manufacturer part number:SI3407DV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 8A 6-TSOP

Case Package:SOT-23

Datasheet:SI3407DV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	6-TSOP
Weight	19.986414mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2W Ta 4.2W Tc
Element Configuration	Single
Power Dissipation	2W
Turn On Delay Time	32 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	24mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1670pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Rise Time	62ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	7.5A
Gate to Source Voltage (Vgs)	12V
Input Capacitance	1.67nF
Drain to Source Resistance	24mOhm
Rds On Max	24 mΩ
Height	1mm
Length	3.05mm
Width	1.65mm
RoHS Status	ROHS3 Compliant