IXFT120N15P

new-10%

Manufacturer part number:IXFT120N15P

Manufacturer:IXYS

Description:Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268

Case Package:SOT-23

Datasheet:IXFT120N15P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2006
Series	PolarHT™ HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	16MOhm
Terminal Finish	Pure Tin (Sn)
Additional Feature	AVALANCHE ENERGY RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	600W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	16m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	42ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	260A
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free