IXTX5N250

new-10%

Manufacturer part number:IXTX5N250

Manufacturer:IXYS

Description:MOSFET 2500V 5A HV Power MOSFET

Case Package:SOT-23

Datasheet:IXTX5N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	960W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.8 Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	8560pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	2500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	44 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	5A
Drain to Source Breakdown Voltage	2.5kV
Pulsed Drain Current-Max (IDM)	20A
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	ROHS3 Compliant