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BSP220,115

BSP220,115

BSP220,115

Nexperia USA Inc.

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 12 Ω @ 200mA, 10V ±20V 90pF @ 25V 200V TO-261-4, TO-261AA

SOT-23

BSP220,115 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 25V
Current - Continuous Drain (Id) @ 25°C 225mA Ta
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -225mA
Drain Current-Max (Abs) (ID) 0.225A
DS Breakdown Voltage-Min 200V
Feedback Cap-Max (Crss) 15 pF
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.585193 $0.585193
10 $0.552069 $5.52069
100 $0.520819 $52.0819
500 $0.491339 $245.6695
1000 $0.463528 $463.528
BSP220,115 Product Details

BSP220,115 Overview


The maximum input capacitance of this device is 90pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -225mA.As shown in the table below, the drain current of this device is 0.225A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 200V.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

BSP220,115 Features


a continuous drain current (ID) of -225mA
a 200V drain to source voltage (Vdss)


BSP220,115 Applications


There are a lot of Nexperia USA Inc.
BSP220,115 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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