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IXFT170N25X3HV

  • IXFT170N25X3HV
  • IXFT170N25X3HV

IXFT170N25X3HV

IXFT170N25X3HV

IXYS

MOSFET (Metal Oxide) N-Channel Tube 7.4m Ω @ 85A, 10V ±20V 13500pF @ 25V 190nC @ 10V 250V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SOT-23

IXFT170N25X3HV Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 960W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.4m Ω @ 85A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 170A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.03000 $15.03
30 $12.63567 $379.0701
120 $11.61100 $1393.32
510 $9.90351 $5050.7901
1,020 $9.56200 $9.562
IXFT170N25X3HV Product Details

IXFT170N25X3HV Overview


A device's maximal input capacitance is 13500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFT170N25X3HV Features


a 250V drain to source voltage (Vdss)


IXFT170N25X3HV Applications


There are a lot of IXYS
IXFT170N25X3HV applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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