IXFT58N20Q

new-10%

Manufacturer part number:IXFT58N20Q

Manufacturer:IXYS

Description:MOSFET N-CH 200V 58A TO-268

Case Package:SOT-23

Datasheet:IXFT58N20Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	40MOhm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	58A
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 29A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	58A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	58A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free