IXFV12N120PS

new-10%

Manufacturer part number:IXFV12N120PS

Manufacturer:IXYS

Description:Trans MOSFET N-CH 1.2KV 12A 3-Pin(3+Tab) PLUS 220

Case Package:SOT-23

Datasheet:IXFV12N120PS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PLUS-220SMD
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	HiPerFET™, PolarP2™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	543W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	543W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.35 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	103nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	34 ns
Turn-Off Delay Time	62 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1.2kV
Avalanche Energy Rating (Eas)	500 mJ
RoHS Status	RoHS Compliant