SI5475BDC-T1-E3

new-10%

Manufacturer part number:SI5475BDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 12V 6A 1206-8

Case Package:SOT-23

Datasheet:SI5475BDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	28mOhm
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	1
Voltage	12V
Power Dissipation-Max	2.5W Ta 6.3W Tc
Element Configuration	Single
Current	6A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	10 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	28m Ω @ 5.6A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1400pF @ 6V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	40nC @ 8V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	72 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Height	1.0922mm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free