FQB34P10TM-F085

new-10%

Manufacturer part number:FQB34P10TM-F085

Manufacturer:ON Semiconductor

Description:MOSFET P-CH 100V 33.5A D2PAK

Case Package:SOT-23

Datasheet:FQB34P10TM-F085 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	Automotive, AEC-Q101, QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.75W Ta 155W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.75W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 16.75A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	33.5A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	250ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	210 ns
Turn-Off Delay Time	160 ns
Continuous Drain Current (ID)	33.5A
Gate to Source Voltage (Vgs)	25V
Drain-source On Resistance-Max	0.06Ohm
Drain to Source Breakdown Voltage	-100V
Avalanche Energy Rating (Eas)	2200 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant