FDW254P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDW254P Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173, 4.40mm Width)
Number of Pins
8
Supplier Device Package
8-TSSOP
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
12MOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Current Rating
-9.2A
Number of Elements
1
Power Dissipation-Max
1.3W Ta
Power Dissipation
1.3W
Turn On Delay Time
15 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
12mOhm @ 9.2A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5878pF @ 10V
Current - Continuous Drain (Id) @ 25°C
9.2A Ta
Gate Charge (Qg) (Max) @ Vgs
96nC @ 4.5V
Rise Time
15ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
210 ns
Continuous Drain Current (ID)
9.2A
Threshold Voltage
600mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-20V
Input Capacitance
5.878nF
Drain to Source Resistance
12mOhm
Rds On Max
12 mΩ
Height
1mm
Length
3mm
Width
4.4mm
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.375247
$0.375247
10
$0.354007
$3.54007
100
$0.333969
$33.3969
500
$0.315066
$157.533
1000
$0.297231
$297.231
FDW254P Product Details
FDW254P Description
FDW254P is a kind of P-channel 1.8 V specified PowerTrench? MOSFET developed by ON Semiconductor based on its high-performance trench process for extremely low RDS (on). It is an electronic device optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).