IXFX21N100F

new-10%

Manufacturer part number:IXFX21N100F

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 21A PLUS247-3

Case Package:SOT-23

Datasheet:IXFX21N100F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerRF™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	500W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	500W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	500m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id	5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	16ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	2500 mJ
RoHS Status	RoHS Compliant