IXFX32N100P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The maximum input capacitance of this device is 14200pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 32A.When VGS=1kV, and ID flows to VDS at 1kVVDS, the drain-source breakdown voltage is 1kV in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 76 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 75A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX32N100P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 75A.
a 1000V drain to source voltage (Vdss)
IXFX32N100P Applications
There are a lot of IXYS
IXFX32N100P applications of single MOSFETs transistors.
- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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