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IXFX44N80P

IXFX44N80P

IXFX44N80P

IXYS

MOSFET (Metal Oxide) N-Channel Tube 190m Ω @ 22A, 10V ±30V 12000pF @ 25V 198nC @ 10V TO-247-3

SOT-23

IXFX44N80P Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarHT™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 100A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $15.33000 $15.33
30 $12.89467 $386.8401
120 $11.84900 $1421.88
510 $10.10651 $5154.3201
IXFX44N80P Product Details

IXFX44N80P Overview


A device's maximum input capacitance is 12000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 44A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 100A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFX44N80P Features


a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 100A.


IXFX44N80P Applications


There are a lot of IXYS
IXFX44N80P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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