APT20M11JVR

new-10%

Manufacturer part number:APT20M11JVR

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 200V 175A 4-Pin SOT-227

Case Package:SOT-23

Datasheet:APT20M11JVR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 3 weeks ago)
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS V®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	HIGH VOLTAGE
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	175A
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	700W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds	21600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	175A Tc
Gate Charge (Qg) (Max) @ Vgs	180nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	175A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	700A
Avalanche Energy Rating (Eas)	3600 mJ
Height	9.6mm
Length	38.2mm
Width	25.4mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free