SPS01N60C3

new-10%

Manufacturer part number:SPS01N60C3

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V 800MA TO251-3

Case Package:SOT-23

Datasheet:SPS01N60C3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	11W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	11W
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	800mA Tc
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	800mA
JEDEC-95 Code	TO-251AA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.8A
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	1.6A
Dual Supply Voltage	650V
Avalanche Energy Rating (Eas)	20 mJ
Nominal Vgs	3 V
REACH SVHC	Unknown
RoHS Status	RoHS Compliant
Lead Free	Lead Free