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IXGH17N100AU1

IXGH17N100AU1

IXGH17N100AU1

IXYS

IGBT 1000V 34A 150W TO247AD

SOT-23

IXGH17N100AU1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1kV
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 34A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*17N100
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 100 ns
Transistor Application POWER CONTROL
Rise Time 200ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 500 ns
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 34A
Reverse Recovery Time 50ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 300 ns
Test Condition 800V, 17A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 17A
Turn Off Time-Nom (toff) 1450 ns
Gate Charge 100nC
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 100ns/500ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 4 V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status RoHS Compliant
Lead Free Lead Free

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