IXGH24N170AH1

new-10%

Manufacturer part number:IXGH24N170AH1

Manufacturer:IXYS

Description:IGBT 1700V 24A 250W TO247AD

Case Package:SOT-23

Datasheet:IXGH24N170AH1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*24N170
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.7kV
Max Collector Current	24A
Reverse Recovery Time	200 ns
Collector Emitter Breakdown Voltage	1.7kV
Voltage - Collector Emitter Breakdown (Max)	1700V
Collector Emitter Saturation Voltage	6V
Input Capacitance	2.86nF
Turn On Time	54 ns
Test Condition	850V, 24A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 16A
Turn Off Time-Nom (toff)	456 ns
IGBT Type	NPT
Gate Charge	140nC
Current - Collector Pulsed (Icm)	75A
Td (on/off) @ 25°C	21ns/336ns
Switching Energy	2.97mJ (on), 790μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	80ns
RoHS Status	RoHS Compliant