IXGH36N60B3

new-10%

Manufacturer part number:IXGH36N60B3

Manufacturer:IXYS

Description:IGBT 600V 92A 250W TO247

Case Package:SOT-23

Datasheet:IXGH36N60B3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Series	GenX3™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	250W
Terminal Position	SINGLE
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	250W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.8V
Max Collector Current	92A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 30A
Turn Off Time-Nom (toff)	350 ns
IGBT Type	PT
Gate Charge	80nC
Current - Collector Pulsed (Icm)	200A
Td (on/off) @ 25°C	19ns/125ns
Switching Energy	540μJ (on), 800μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	160ns
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free