FGH20N6S2

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Manufacturer part number:FGH20N6S2

Manufacturer:ON Semiconductor

Description:FGH20N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH20N6S2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Max Power Dissipation	125W
Current Rating	28A
Element Configuration	Single
Power Dissipation	125W
Input Type	Standard
Rise Time	4.5ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	28A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Test Condition	390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 7A
Gate Charge	30nC
Current - Collector Pulsed (Icm)	40A
Td (on/off) @ 25°C	7.7ns/87ns
Switching Energy	25μJ (on), 58μJ (off)
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$4.981120	$4.98112
10	$4.699170	$46.9917
100	$4.433179	$443.3179
500	$4.182244	$2091.122
1000	$3.945514	$3945.514

FGH20N6S2 Description

FGH20N6S2 is a type of 600V, SMPS II Series N-Channel IGBT with an Anti-Parallel StealthTM diode developed by ON Semiconductor. It is characterized by the fast switching speed of the SMPS IGBTs, lower gate charge, lower plateau voltage, and high avalanche capability (UIS). Thus it is ideally suitable for high-voltage switched mode power supply applications. Moreover, the FGH20N6S2 is able to shorten delay times and reduce the power requirement of the gate drive.