FGH40N60SFDTU

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Manufacturer part number:FGH40N60SFDTU

Manufacturer:ON Semiconductor

Description:FGH40N60SFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGH40N60SFDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW CONDUCTION LOSS
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	290W
Base Part Number	FGH40N60
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	25 ns
Power - Max	290W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	115 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Reverse Recovery Time	45 ns
JEDEC-95 Code	TO-247AB
Collector Emitter Breakdown Voltage	600V
Turn On Time	108 ns
Test Condition	400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 40A
Turn Off Time-Nom (toff)	170 ns
IGBT Type	Field Stop
Gate Charge	120nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	25ns/115ns
Switching Energy	1.13mJ (on), 310μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Fall Time-Max (tf)	90ns
Height	20.82mm
Length	15.87mm
Width	4.82mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free