SGL60N90DG3YDTU                     Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.

SGL60N90DG3YDTU                   Features

? High speed switching

? Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A

? High input impedance

? Built-in fast recovery diode

SGL60N90DG3YDTU                         Applications

Home appliances, induction heaters, induction heating JARs, and microwave ovens.