Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	6V
Max Collector Current	13A
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Test Condition	1250V, 4A, 20 Ω, 15V
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 4A
Turn Off Time-Nom (toff)	471 ns
Gate Charge	57nC
Current - Collector Pulsed (Icm)	46A
Td (on/off) @ 25°C	-/350ns
Switching Energy	360μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
30	$15.15167	$454.5501

IXGH4N250C

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