IRGC4630B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRGC4630B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mounting Type
Surface Mount
Package / Case
Die
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
175°C TJ
Packaging
Bulk
Published
2013
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
NO LEAD
JESD-30 Code
S-XUUC-N2
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
30A
Turn On Time
65 ns
Turn Off Time-Nom (toff)
160 ns
Gate-Emitter Voltage-Max
20V
VCEsat-Max
1.325 V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
ROHS3 Compliant
IRGC4630B Product Details
IRGC4630B Description
IRGC4630B manufactured by Infineon Technologies is a type of insulated gate bipolar transistor that is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.