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IRGC4630B

IRGC4630B

IRGC4630B

Infineon Technologies

IRGC4630B datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRGC4630B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature 175°C TJ
Packaging Bulk
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Position UPPER
Terminal Form NO LEAD
JESD-30 Code S-XUUC-N2
Number of Elements 1
Configuration SINGLE
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 30A
Turn On Time 65 ns
Turn Off Time-Nom (toff) 160 ns
Gate-Emitter Voltage-Max 20V
VCEsat-Max 1.325 V
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status ROHS3 Compliant
IRGC4630B Product Details

IRGC4630B Description


IRGC4630B manufactured by Infineon Technologies is a type of insulated gate bipolar transistor that is used to provide high efficiency in a wide range of applications. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of applications. Improved Reliability can be ensured due to rugged hard switching performance and higher power capability.



IRGC4630B Features


Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Maximum junction temperature 175°C

5μs short circuit SOA



IRGC4630B Applications


Industrial motor drives

Inverter

UPS

Welding 


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